LSK170
ULTRA LOW NOISE
SINGLE
N-CHANNEL JFET
Linear Systems replaces discontinued Toshiba 2SK170 with LSK170
 The 2SK170 / LSK170 is an Ultra Low Noise Single N-Channel JFET

Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to capacitance ratio and narrow range of low value IDSS provide solutions for low noise applications which cannot tolerate high values of capacitance or wide ranges of IDSS
The narrow ranges of IDSS binning with the 2SK170 / LSK170 promote ease of design tolerancing, particularly in low voltage applications. The 2SK170 / LSK170 is ideal for portable battery operated applications, and features high BVDSS for maximum linear headroom in high transient program content amplifiers. The 2SK170 / LSK170 series has a uniquely linear VGS transfer function for a stability that is highly desirable, particularly for audio front-end preamplifiers.

2SK170 / LSK170 Applications:
Audio amplifiers and preamps, discrete low-noise operational amplifiers, battery-operated audio preamps, guitar pickups, effects pedals, microphones, audio mixer consoles, acoustic sensors, sonobuoys, hydrophones, chemical and radiation detectors, instrumentation amplifiers, accelerometers, CT scanners input stages, oscilloscope input stages, electrometers and vibrations detectors.
Surface mount SOT23 available (not offered by Toshiba 2SK170)
Improved pin for pin replacement for Toshiba 2SK170
Improved functional replacement for Interfet IF1320, IF1330, IF1331, and IF4500
 FEATURES
 ULTRA LOW NOISE en= 0.9nV/√Hz
 HIGH BREAKDOWN VOLTAGE BVGSS = 40V max
 HIGH GAIN Yfs = 22mS (typ)
 HIGH INPUT IMPEDANCE IG = -500pA max
 LOW CAPACITANCE 22pF max
 IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170
 ABSOLUTE MAXIMUM RATINGS  1
@ 25 °C (unless otherwise stated)
 Maximum Temperatures
 Storage Temperature -65 to +150 °C
 Operating Junction Temperature -55 to +135 °C
 Maximum Power Dissipation
 Continuous Power Dissipation @ +125 °C 400mW
 Maximum Currents
 Gate Forward Current IG(F) = 10mA
 Maximum Voltages
 Gate to Source VGSS = 40V
 Gate to Drain VGDS = 40V
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC MIN TYP MAX UNITS  CONDITIONS
BVGSS  Gate to Source Breakdown Voltage 40 V  VDS = 0, ID = 100µA
VGS(OFF)  Gate to Source Pinch-off Voltage 0.2 2 V  VDS = 10V, ID = 1nA
VGS  Gate to Source Operating Voltage 0.5 V  VDS = 10V, ID = 1mA
IDSS  Drain to Source Saturation
 Current		 LSK170A 2.6   6.5 mA  VDG = 10V, VGS = 0
LSK170B 6   12
LSK170C 10   20
IG  Gate Operating Current     0.5 nA VDG = 10V, ID = 1mA
IGSS  Gate to Source Leakage Current     1 nA  VDG = 10V, VDS = 0
Yfss  Full Conduction Transconductance 22 mS  VGD = 10V, VGS = 0, f = 1kHz
Yfs  Typical Conduction Transconductance 10 mS  VDG = 15V, ID = 1mA
en  Noise Voltage 0.9 1.9 nV/ Hz  VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz
en  Noise Voltage 2.5 4 nV/ Hz  VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz
CISS  Common Source Input Capacitance 20 pF  VDS = 15V, ID = 500uA
CRSS  Common Source Reverse Transfer Cap. 5 pF
 
Available Packages:
2SK170 / LSK170 in TO-92
2SK170 / LSK170 in SOT-23
2SK170 / LSK170 available as bare die

Please contact Mintech for package and die dimensions
 		  
Packages
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Mintech Semiconductors Ltd Tel: +44 1603 788967, Fax: +44 1603788920 Email: sales@mintech.co.uk Web: www.mintech.co.uk