Linear Systems replaces discontinued Toshiba 2SK389 with LSK389 The 2SK389

LSK389
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET

Linear Systems replaces discontinued Toshiba 2SK389 with LSK389
The 2SK389 / LSK389 is a monolithic matched dual JFET on a single chip

Why use On-Chip Dual JFET instead
of 2 single JFETS?

Save Cost
2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual JFETS and offers ZERO yield loss.

Improve Performance
2SK389 / LSK389 On-Chip IDSS matching gives closest possible synchronous electrical performance and also offers better matched performance when the chip is subjected to temperature.

2SK389 / LSK389 Applications:
End audio microphone, Audio Amplifier and audio effects box manufacturers
Instrumentation-input stages of various instruments
The acoustic sensor market –sonoboys / anti-submarine, military personnel and vehicle detectors, sonar makers. Radiation detectors.

FEATURES
ULTRA LOW NOISE	e_n= 0.9nV/√Hz (typ)
TIGHT MATCHING	\|V_GS1-2\| = 20mV max
HIGH BREAKDOWN VOLTAGE	BV_GSS = 40V max
HIGH GAIN	Y_fs = 20mS (typ)
LOW CAPACITANCE	25pF typ
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
ABSOLUTE MAXIMUM RATINGS¹@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature	-65 to +150 °C
Operating Junction Temperature	-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C	400mW
Maximum Currents
Gate Forward Current	I_G(F) = 10mA
Maximum Voltages
Gate to Source	V_GSS = 40V
Gate to Drain	V_GDS= 40V

MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

|V_{GS1 -}V_GS2|

Differential Gate to Source Cutoff
Voltage

V_DS = 10V, I_D = 1mA

I_DSS1

I_DSS2

Gate to Source Saturation Current Ratio

0.9

V_DS = 10V, V_GS = 0V

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL	CHARACTERISTIC		MIN	TYP	MAX	UNITS	CONDITIONS
BV_GSS	Gate to Source Breakdown Voltage		40			V	V_DS = 0, I_D = 100µA
V_GS(OFF)	Gate to Source Pinch-off Voltage		0.15		2	V	V_DS = 10V, I_D = 0.1µA
I_DSS	Drain to Source Saturation Current	LSK389A	2.6		6.5	mA	V_DS = 10V, V_GS = 0
		LSK389B	6		12
		LSK389C	10		20
I_GSS	Gate to Source Leakage Current				200	pA	V_GS = -30V, V_DS = 0
Y_fs	Full Conduction Transconductance		8	20		mS	V_DS = 10V, V_GS = 0, I_DSS = 3mA, f = 1kHz
e_n	Noise Voltage			0.9	1.9	nV/ Hz	V_DS = 10V, I_D = 2mA, f = 1kHz, NBW = 1Hz
e_n	Noise Voltage			2.5	4	nV/ Hz	V_DS = 10V, I_D = 2mA, f = 10Hz, NBW = 1Hz
C_ISS	Common Source Input Capacitance			25		pF	V_DS = 10V, V_GS = 0, f = 1MHz,
C_RSS	Common Source Reverse Transfer Cap.			5.5		pF	V_DG = 10V, I_D = 0, f = 1MHz,

Available Packages:
2SK389 / LSK389 in SOIC-8 Lead
2SK389 / LSK389 in Thru-hole TO-71 6 Lead
2SK389 / LSK389 Toshiba footprint, SO8 / TO-71 with socket adaptor
2SK389 / LSK389 available as bare die
2SK389 / LSK389 available as wafer form
Please contact Mintech for package and die dimensions

Packages

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.

Mintech Semiconductors Ltd Tel: +44 1603 788967, Fax: +44 1603788920 Email: sales@mintech.co.uk Web: www.mintech.co.uk